Baliga B.J. Silicon Carbide Power Devices

World Scientific, 2005. — 523 p. — ISBN: 981-256-605-8.Power semiconductor devices are widely used for the control and management of electrical energy. The improving performance of power devices has enabled cost reductions and efficiency increases resulting in lower fossil fuel usage and less environmental pollution. This book provides the first cohesive treatment of the physics and design of silicon carbide power devices with an emphasis on unipolar structures. It uses the results of extensive numerical simulations to elucidate the operating principles of these important devices.
Readership: For practising engineers working on power devices, and as a supplementary textbook for a graduate level course on power devices.Material Properties and Technology
Breakdown Voltage
PiN Rectifiers
Schottky Rectifiers
Shielded Schottky Rectifiers
Metal-Semiconductor Field Effect Transistors
The Baliga-Pair Configuration
Planar Power MOSFETs
Shielded Planar MOSFETs
Trench-Gate Power MOSFETs
Shielded Trendch-Gate MOSFETs
Charge Coupled Structures
Integral Diodes
Lateral High Voltage FETs
Synopsis.