Feenstra R.M., Wood C.E.C. Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications

Wiley, 2008. — 337 p. — ISBN: 978-0-470-51752-9.Porous Silicon Carbide and Gallium Nitride: Epitaxy, Catalysis, and Biotechnology Applications presents the state-of-the-art in knowledge and applications of porous semiconductor materials having a wide band gap. This comprehensive reference begins with an overview of porous wide-band-gap technology, and describes the underlying scientific basis for each application area. Additional chapters cover preparation, characterization, and topography; processing porous SiC; medical applications; magnetic ion behavior, and many more.
This is a reference for scientists and engineers working at the intersection of compound semiconductor technology. Its comprehensive coverage is valuable for both students and experts in this burgeoning field.