Kooi E. The Surface Properties of Oxidized Silicon

Springer-Verlag Berlin Heidelberg, 1967. — x, 134 p., 57 ill. — ISBN: 978-3-662-39204-1,978-3-662-40210-8.General Review of the Effect of Silicon-Dioxide Coatings on the Surface Properties of Silicon and the Importance of these Coatings in Semiconductor- Device Technology.
Bulk properties of silicon
Imperfections at the surface of a silicon crystal.
Physical model of an oxide-coated semiconductor surface.
The effect of the surface properties on semiconductor-device characteristics.
The use of Si02 films for selective masking against impurity diffusion into silicon.
The MOS transistor.
Capacitance versus d.c.-voltage measurements on MOS structures
The preparation of silicon-dioxide films on silicon.
Chemical and physical properties of thermally grown Si0₂ films.
Effect of oxidation and further treatments on the properties of the Si-Si0₂ system.
Stability problems in oxide-coated silicon devices.
Diffusion of Phosphorus into Silicon and the Masking Action of Silicon-Dioxide Films.
Introduction.
Experimental procedure.
Composition of oxide films formed during diffusion of phosphorus into silicon.
The masking action of Si0₂ films against P₂0₅ diffusions.
The use of phosphorus diffusions in planar processes.
Gettering of metallic impurities by surface films.
Effects of Low-Temperature Heat Treatments on the Surface Properties of Oxidized Silicon.The MOS transistor
Effect of ambient gas during heat treatments.
Influence of an aluminium electrode during heat treatment of MOS structures.
Low-temperature treatments of silicon oxidized in dry oxygen.
Surface charge, present after annihilation of the fast surface states.
Conclusions.[/i]
Influence of X-Ray Irradiations on the Charge Distributions in Metal-Oxide-Silicon Structures.
Introduction.
Experimental procedure.
Results and discussion.
Possible application for detection of ionizing irradiation.
Conclusion.
Effects of Ionizing Irradiations on the Properties of Oxide-Covered Silicon Surfaces.
Introduction.
Experimental procedure.
Results of irradiation experiments.
Discussion.
Conclusions.
The Surface Charge in Oxidized Silicon.
Introduction.
Sample preparation and measurements.
Experimental results.
Discussion
Reducing treatments of oxidized silicon.
Conclusions. (To each chapter).List of symbols.