Lundstrom M.S., Guo J. Nanoscale transistors. Device Physics, Modeling and Simulation

New York: Springer., 2006. — 222 p.Silicon technology continues to progress, but device scaling is rapidly taking the metal oxide semiconductor field-effect transistor (MOSFET) to its limit. When MOS technology was developed in the 1960's, channel lengths were about 10 micrometers, but researchers are now building transistors with channel lengths of less than 10 nanometers. Our objective is to provide engineers and scientists with that understanding - not only of nano-devices, but also of the considerations that ultimately determine system performance. This monograph was written for engineers and scientists who are engaged in work on nanoscale electronic devices. Familiarity with basic semiconductor physics and electronics is assumed. Chapter 1 reviews some central concepts, and Chapter 2 summarizes the essentials of traditional semiconductor transistors, digital circuits, and systems. Chapter 3 presents a nontraditional view of the ballistic MOSFET. By treating a traditional device from a fresh perspective, this chapter introduces electrical engineers to new ways of thinking about small electronic devices. In Chapter 4, we extend the model to discuss the physics of scattering in nanotransistors. Chapter 5 uses the same, general approach to treat semiconductor nanowire and carbon nanotube FETs. Finally, in Chapter 6, we introduce a 'bottom-up' view by discussing electronic conduction in molecules and showing how a simple model for conduction in molecules can also be applied to derive the results of the previous chapters. We also identify the limitations of the approach by discussing a structurally similar, but much different device, the single electron transistor.Basic Concepts
Devices, Circuits and Systems
The Ballistic Nanotransistors
Scattering Theory of the MOSFET
Nanowire Field-Effect Transistors
Transistors at the Molecular Scale